IndiumV3, Russie, Analysis, bibRecord, 000480

Electron phase and spin decoherence in the vicinity of the second subband edge in an asymmetrical quantum well

Identifieur interne : 000480 ( Russie/Analysis ); précédent : 000479; suivant : 000481

Electron phase and spin decoherence in the vicinity of the second subband edge in an asymmetrical quantum well

Auteurs : RBID : Pascal:04-0130656

Descripteurs français

Pascal (Inist)
- Sous bande, Gaz électron 2 dimensions, Niveau Fermi, Cohérence quantique, Diffusion, Magnétorésistance, Hétérogénéité, Etude expérimentale, Interface, Puits quantique, Indium phosphure, Semiconducteur III-V, Composé binaire, Gallium arséniure, Indium arséniure, Composé ternaire, In P, InP, As Ga In, InGaAs, 7340K, 7220D.

English descriptors

KwdEn :
- Binary compounds, Experimental study, Fermi level, Gallium arsenides, III-V semiconductors, Indium arsenides, Indium phosphides, Inhomogeneity, Interfaces, Magnetoresistance, Quantum coherence, Quantum wells, Scattering, Subband, Ternary compounds, Two-dimensional electron gas.

Abstract

Weak antilocalization of a two-dimensional electron gas formed at a In_0.53Ga_0.47As/InP heterointerface was studied. The Fermi level was varied from below, to above, the energy minimum of the second subband. A model for quantum coherence with two conducting subbands and fast intersubband scattering was used to extract the characteristic phase and spin decoherence rates from experimental magnetoresistance data. Taking into account the spatial inhomogeneity of the energy associated with the subband minimum, the first and second subband decoherence contributions were separated. It was shown that phase decoherence in the second subband is much faster than in the first subband and it decreases with increasing occupation of the second subband. By contrast, spin dephasing due to scattering in the second subband and intersubband scattering does not play a noticeable role.

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Pascal:04-0130656

Le document en format XML

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<author><name sortKey="Saveliev, I G" uniqKey="Saveliev I">I. G. Saveliev</name>
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<author><name sortKey="Bykanov, D D" uniqKey="Bykanov D">D. D. Bykanov</name>
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<author><name sortKey="Novikov, S V" uniqKey="Novikov S">S. V. Novikov</name>
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<front><div type="abstract" xml:lang="en">Weak antilocalization of a two-dimensional electron gas formed at a In<sub>0.53</sub>
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As/InP heterointerface was studied. The Fermi level was varied from below, to above, the energy minimum of the second subband. A model for quantum coherence with two conducting subbands and fast intersubband scattering was used to extract the characteristic phase and spin decoherence rates from experimental magnetoresistance data. Taking into account the spatial inhomogeneity of the energy associated with the subband minimum, the first and second subband decoherence contributions were separated. It was shown that phase decoherence in the second subband is much faster than in the first subband and it decreases with increasing occupation of the second subband. By contrast, spin dephasing due to scattering in the second subband and intersubband scattering does not play a noticeable role.</div>
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Electron phase and spin decoherence in the vicinity of the second subband edge in an asymmetrical quantum well

Electron phase and spin decoherence in the vicinity of the second subband edge in an asymmetrical quantum well

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

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